- 您现在的位置：买卖IC网 > PDF目录182422 > MJD41CI (FAIRCHILD SEMICONDUCTOR CORP) 6 A, 100 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MJD41CI |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 76K |
| 代理商： | MJD41CI |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD41C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
6
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
100
V
ICEO
Collector Cut-off Current
VCE = 60V, IB = 0
50
A
ICES
Collector Cut-off Current
VCE = 100V, VBE = 0
10
uA
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
0.5
mA
hFE
* DC Current Gain
VCE = 4V, IC = 0.3A
VCE = 4V, IC = 3A
30
15
75
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 6A, IB = 600mA
1.5
V
VBE(on)
* Base-Emitter ON Voltage
VCE = 6A, IC = 4A
2
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA
3
MHz
MJD41C
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP41 and TIP41C
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
相关PDF资料 |
PDF描述 |
|---|---|
| MJD42C-1 | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD44E3-1 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD44H11T4-A | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD45H11T4-A | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD45H11-1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD41CNPN | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Lead Formed for Surface Mount Applications in Plastic Sleeves |
| MJD41CRL | 功能描述:两极晶体管 - BJT 6A 100V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD41CRLG | 功能描述:两极晶体管 - BJT 6A 100V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD41CT4 | 功能描述:两极晶体管 - BJT 6A 100V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD41CT4G | 功能描述:两极晶体管 - BJT 6A 100V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。