参数资料
型号: MJD45H11T4-A
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA
封装: ROHS COMPLIANT, TO-252, DPAK-3
文件页数: 1/8页
文件大小: 0K
代理商: MJD45H11T4-A
August 2009
Doc ID 16095 Rev 1
1/8
8
MJD44H11T4-A
MJD45H11T4-A
Complementary power transistors
Features
The devices are qualified for automotive
application
Low collector-emitter saturation voltage
Fast switching speed
Surface-mounting TO-252 (DPAK) power
package in tape and reel (suffix "T4")
Applications
Power amplifier
Switching circuits
Description
The devices are manufactured in low voltage multi
epitaxial planar technology. They are intended for
general purpose linear and switching applications.
.
Figure 1.
Internal schematic diagram
DPAK
TO-252
1
3
2
TAB
Table 1.
Device summary
Order codes
Marking
Polarity
Package
Packaging
MJD44H11T4-A
MJD44H11
NPN
DPAK
Tape and reel
MJD45H11T4-A
MJD45H11
PNP
DPAK
Tape and reel
相关PDF资料
PDF描述
MJD45H11-1 8 A, 80 V, PNP, Si, POWER TRANSISTOR
MJD44H11-1 8 A, 80 V, NPN, Si, POWER TRANSISTOR
MJD47-I 1 A, 250 V, NPN, Si, POWER TRANSISTOR
MJD50-1 1 A, 400 V, NPN, Si, POWER TRANSISTOR
MJD47-1 1 A, 250 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJD45H11T4G 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD45H11T4G 制造商:ON Semiconductor 功能描述:POWER TRANSISTOR PNP -80V D-PAK
MJD45H11T4G-CUT TAPE 制造商:ON 功能描述:MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252
MJD45H11TF 功能描述:两极晶体管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD45H11TF 制造商:Fairchild Semiconductor Corporation 功能描述:MULTIPLEXER IC ROHS COMPLIANT:NO