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参数资料
| 型号： | MJD44H11-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | DPAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 代理商： | MJD44H11-1 |
Complementary Power
Transistors
DPAK For Surface Mount Applications
. . . for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage —
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
Rating
Symbol
D44H11 or D45H11
Unit
Collector–Emitter Voltage
VCEO
80
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
8
16
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
20
0.16
Watts
W/
_C
Total Power Dissipation (1)
@ TA = 25_C
Derate above 25
_C
PD
1.75
0.014
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
6.25
_C/W
Thermal Resistance, Junction to Ambient (1)
RθJA
71.4
_C/W
Lead Temperature for Soldering
TL
260
_C
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 5
1
Publication Order Number:
MJD44H11/D
MJD44H11
MJD45H11
CASE 369A–13
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
*ON Semiconductor Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243 6.172
0.063 1.6
0.1
18
3.0
0.100 2.54
0.165 4.191
0.190 4.826
inches
mm
*
NPN
PNP
*
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD44H11-1G | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11G | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11RL | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11RLG | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11T4 | 功能描述:两极晶体管 - BJT NPN Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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