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参数资料
| 型号： | MJD44E3-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369-07, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 44K |
| 代理商： | MJD44E3-1 |
Darlington Power Transistor
DPAK For Surface Mount Application
. . . for general purpose power and switching output or driver stages
in applications such as switching regulators, converters, and power
amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves (No
Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
Electrically Similar to Popular D44E3 Device
High DC Gain — 1000 Min @ 5.0 Adc
Low Sat. Voltage — 1.5 V @ 5.0 Adc
Compatible With Existing Automatic Pick & Place Equipment
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
80
Vdc
Emitter–Base Voltage
VEB
7
Vdc
Collector Current — Continuous
IC
10
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
20
0.16
Watts
W/
_C
Total Power Dissipation (1)
@ TA = 25_C
Derate above 25
_C
PD
1.75
0.014
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
6.25
_C/W
Thermal Resistance, Junction to Ambient (1)
RθJA
71.4
_C/W
Lead Temperature for Soldering
TL
260
_C
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1
Publication Order Number:
MJD44E3/D
MJD44E3
NPN DARLINGTON
SILICON
POWER TRANSISTOR
10 AMPERES
80 VOLTS
20 WATTS
*ON Semiconductor Preferred Device
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
*
CASE 369A–13
CASE 369–07
0.243 6.172
0.063 1.6
0.1
18
3.0
0.100 2.54
0.165 4.191
0.190 4.826
inches
mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD44E3T4 | 功能描述:达林顿晶体管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD44E3T4G | 功能描述:达林顿晶体管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD44H11 | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
| MJD44H11_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
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