参数资料
型号: MJD44E3-1
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 10 A, 80 V, NPN, Si, POWER TRANSISTOR
封装: CASE 369-07, 3 PIN
文件页数: 4/4页
文件大小: 44K
代理商: MJD44E3-1
MJD44E3
http://onsemi.com
4
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MJD44E3/D
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相关PDF资料
PDF描述
MJD44H11T4-A 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA
MJD45H11T4-A 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA
MJD45H11-1 8 A, 80 V, PNP, Si, POWER TRANSISTOR
MJD44H11-1 8 A, 80 V, NPN, Si, POWER TRANSISTOR
MJD47-I 1 A, 250 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJD44E3T4 功能描述:达林顿晶体管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJD44E3T4G 功能描述:达林顿晶体管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJD44H11 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD44H11_03 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors