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参数资料
| 型号： | MJD44E3-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369-07, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 44K |
| 代理商： | MJD44E3-1 |
MJD44E3
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
—
—
10
A
Emitter Cutoff Current
(VEB = 7 Vdc)
IEBO
—
—
1
A
ON CHARACTERISTICS
Collector–Emitter Saturation Voltage
(IC = 5 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 20 mAdc)
VCE(sat)
—
—
1.5
2
Vdc
Base–Emitter Saturation Voltage
(IC = 5 Adc, IB = 10 mAdc)
VBE(sat)
—
—
2.5
Vdc
DC Current Gain
(VCE = 5 Vdc, IC = 5 Adc)
hFE
1000
—
—
—
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
Ccb
—
—
130
pF
SWITCHING TIMES
Delay and Rise Times
(IC = 10 Adc, IB1 = 20 mAdc)
td + tr
—
0.6
—
s
Storage Time
(IC = 10 Adc, IB1 = IB2 = 20 mAdc)
ts
—
2
—
s
Fall Time
(IC = 10 Adc, IB1 = IB2 = 20 mAdc)
tf
—
0.5
—
s
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
5
10
20
100
5
I C
,COLLECT
OR
CURRENT
(AMPS)
2
1
0.2
0.1
0.5
50
230
1
Figure 1. Maximum Forward Bias
Safe Operating Area
Figure 2. Power Derating
TC
TA
SURFACE
MOUNT
TC = 25°C SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
25
T, TEMPERATURE (°C)
0
50
75
100
125
150
20
15
10
5
P D
,POWER
DISSIP
ATION
(W
ATTS)
2.5
0
2
1.5
1
0.5
TA TC
0.3
3
100 s
1 ms
5 ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD44E3T4 | 功能描述:达林顿晶体管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD44E3T4G | 功能描述:达林顿晶体管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD44H11 | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
| MJD44H11_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
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