参数资料
型号: MJD361T4-A
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA
封装: ROHS COMPLIANT, TO-252, DPAK-3
文件页数: 3/7页
文件大小: 0K
代理商: MJD361T4-A
MJD360T4-A, MJD361T4-A
Electrical characteristics
Doc ID 16126 Rev 1
3/7
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Note:
For PNP types voltage and current values are negative.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCE = 60 V
20
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 4 V
100
A
V(BR)CEO
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10 mA
60
V
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 1 mA
60
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IC = 100 A
5
V
VCE(sat)
(1)
1.
Pulse test: pulse duration
≤300 s, duty cycle ≤2 %.
Collector-emitter
saturation voltage
IC = 200 mA
IB = 10 mA
IC = 1 A
IB = 50 mA
IC = 3 A
IB = 150 mA
0.1
0.3
0.9
V
hFE
(1)
DC current gain
IC = 200 mA
VCE = 1 V
IC = 1 A
_
VCE = 4 V
IC = 3 A
VCE = 4 V
90
60
30
130
100
60
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