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参数资料
| 型号： | MJD44H11T4-A |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| 封装： | ROHS COMPLIANT, TO-252, DPAK-3 |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 代理商： | MJD44H11T4-A |
MJD44H11T4-A, MJD45H11T4-A
8/8
Doc ID 16095 Rev 1
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相关PDF资料 |
PDF描述 |
|---|---|
| MJD45H11T4-A | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD45H11-1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD44H11-1 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD47-I | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJD50-1 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD44H11T4G | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 80 V 8 A NPN Complementary Power Transistor - TO-252 |
| MJD44H11T5 | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11T5G | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD44H11TF | 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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