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参数资料
| 型号： | MJD45H11-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | DPAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 代理商： | MJD45H11-1 |
MJD44H11 MJD45H11
http://onsemi.com
3
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RθJC(t) = r(t) RθJC
RθJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
RESIST
ANCE
(NORMALIZED)
0.7
Figure 1. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
100
200 300 500
0.2
SINGLE PULSE
D = 0.5
0.1
0.02
0.01
0.05
I C
,COLLECT
OR
CURRENT
(AMP)
20
1
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02
3
100
2
0.5
5
0.1
THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT
5
7
20
70
10
100 s
dc
0.05
0.3
1
3
10
50
30
Figure 2. Maximum Forward Bias
Safe Operating Area
1ms
500 s
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
25
T, TEMPERATURE (°C)
0
50
75
100
125
150
20
15
10
5
P D
,POWER
DISSIP
ATION
(W
ATTS)
2.5
0
2
1.5
1
0.5
TA TC
Figure 3. Power Derating
TC
TA
SURFACE
MOUNT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD45H11-1G | 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD45H11G | 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD45H11RL | 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD45H11RLG | 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD45H11T4 | 功能描述:两极晶体管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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