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参数资料
型号： MJE18008AU
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 8 A, 450 V, NPN, Si, POWER TRANSISTOR
封装： PLASTIC, TO-220AB, 3 PIN
文件页数： 12/65页
文件大小： 503K
代理商： MJE18008AU
MJE18008 MJF18008
3–743
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
VBE(sat)
—
0.82
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
(TC = 125_C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125_C)
VCE(sat)
—
0.3
0.35
0.4
0.6
0.65
0.7
0.8
Vdc
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
—
6.0
5.0
11
10
—
28
9.0
8.0
15
16
20
34
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
—
13
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
100
150
pF
Input Capacitance (VEB = 8.0 V)
Cib
—
1750
2500
pF
Dynamic Saturation Voltage:
Determined 1 0
s and
(IC = 2.0 Adc
IB1 = 200 mAdc
1.0
s
(TC = 125°C)
VCE(dsat)
—
5.5
11.5
—
Vdc
Determined 1.0
s and
3.0
s respectively after
rising IB1 reaches 90% of
IB1 = 200 mAdc
VCC = 300 V)
3.0
s
(TC = 125°C)
—
3.5
6.5
—
g B1
final IB1
(see Figure 18)
(IC = 5.0 Adc
IB1 =1 0Adc
1.0
s
(TC = 125°C)
—
11.5
14.5
—
IB1 = 1.0 Adc
VCC = 300 V)
3.0
s
(TC = 125°C)
—
2.4
9.0
—
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
v 10%, Pulse Width = 20 s)
Turn–On Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc, VCC = 300 V)
(TC = 125°C)
ton
—
200
190
300
—
ns
Turn–Off Time
(TC = 125°C)
toff
—
1.2
1.5
2.5
—
s
Turn–On Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc, VCC = 300 V)
(TC = 125°C)
ton
—
100
250
180
—
ns
Turn–Off Time
(TC = 125°C)
toff
—
1.6
2.0
2.5
—
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)
Fall Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc)
(TC = 125°C)
tfi
—
100
120
180
—
ns
Storage Time
(TC = 125°C)
tsi
—
1.5
1.9
2.75
—
s
Crossover Time
(TC = 125°C)
tc
—
250
230
350
—
ns
Fall Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc)
(TC = 125°C)
tfi
—
85
135
150
—
ns
Storage Time
(TC = 125°C)
tsi
—
2.0
2.6
3.2
—
s
Crossover Time
(TC = 125°C)
tc
—
210
250
300
—
ns
相关PDF资料
PDF描述
MJE18008AS 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008BC 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18009BV 10 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18009BC 10 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18009AN 10 A, 450 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
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MJE180PWD 功能描述:TRANSISTOR NPN 40V 3A RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
MJE180STU 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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