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参数资料
| 型号： | MJF122 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTONS |
| 中文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 267K |
| 代理商： | MJF122 |
3
Motorola Bipolar Power Transistor Device Data
P
0
80
60
40
20
4
3
2
1
TA
TC
0
Figure 3. Maximum Power Derating
T, TEMPERATURE (
°
C)
40
60
100
120
160
80
140
TC
20
t, TIME (ms)
0.01
0.1
0.5
10
20
50
100
200
500
5K
10K
1
5
2
1
0.2
0.1
0.05
r
SINGLE PULSE
R
θ
JC(t) = r(t) R
θ
JC
TJ(pk) – TC = P(pk) R
θ
JC(t)
R
Figure 4. Thermal Response
0.5
0.3
0.03
0.02
0.2
1K
2K
30
300
3
0.3
3K
TA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
1
10
1
30
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
TC = 25
°
C (SINGLE PULSE)
I
0.1
2
3
50
3
2
0.3
10
0.2
dc
TJ = 150
°
C
1 ms
5 ms
100
μ
s
5
0.5
5
100
20
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJF122G | 功能描述:达林顿晶体管 5A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJF127 | 功能描述:达林顿晶体管 5A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJF127G | 功能描述:达林顿晶体管 5A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJF13007 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| MJF13009 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
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