参数资料
型号: MJF122
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: COMPLEMENTARY SILICON POWER DARLINGTONS
中文描述: 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220
封装: TO-220, 3 PIN
文件页数: 6/8页
文件大小: 267K
代理商: MJF122
6
Motorola Bipolar Power Transistor Device Data
BASE
EMITTER
COLLECTOR
8 k
120
BASE
EMITTER
COLLECTOR
8 k
120
NPN
MJF122
PNP
MJF127
Figure 13. Darlington Schematic
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.110” MIN
Figure 14. Clip Mounting Position
for Isolation Test Number 1
* Measurement made between leads and heatsink with all leads shorted together
CLIP
CLIP
0.107” MIN
LEADS
HEATSINK
0.107” MIN
Figure 15. Clip Mounting Position
for Isolation Test Number 2
Figure 16. Screw Mounting Position
for Isolation Test Number 3
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
TEST CONDITIONS FOR ISOLATION TESTS*
4–40 SCREW
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
CLIP
HEATSINK
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in
.
lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-
stant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in
.
lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in
.
lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in
.
lbs of mounting torque under any mounting conditions.
Figure 17. Typical Mounting Techniques*
MOUNTING INFORMATION
**For more information about mounting power semiconductors see Application Note AN1040.
相关PDF资料
PDF描述
MJF15030 COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS
MJF15030 COMPLEMENTARY SILICON POWER TRANSISTORS
MJF15031 COMPLEMENTARY SILICON POWER TRANSISTORS
MJF15031 COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS
MJF18002 POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS
相关代理商/技术参数
参数描述
MJF122G 功能描述:达林顿晶体管 5A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJF127 功能描述:达林顿晶体管 5A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJF127G 功能描述:达林顿晶体管 5A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJF13007 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors
MJF13009 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor