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参数资料
| 型号： | MJL21196 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封装： | CASE 340G-02, TO-3BPL, TO-264, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 135K |
| 代理商： | MJL21196 |
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
—
—
100
μ
Adc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
—
—
100
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
4.0
2.25
—
—
—
—
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
25
8
—
—
100
—
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
—
—
2.2
Vdc
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
—
—
—
—
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
hFE
matched
(Matched pair hFE = 50 @ 5 A/5 V)
THD
—
—
0.8
0.08
—
—
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%
Cob
—
—
500
pF
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
,
T
F
PNP MJL21195
NPN MJL21196
IC, COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
2.5
2.0
1.0
10
0.1
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
0.1
1.0
VCE = 10 V
TJ = 25
°
C
ftest = 1 MHz
VCE = 10 V
TJ = 25
°
C
ftest = 1 MHz
3.5
3.0
,
T
F
VCE = 5 V
VCE = 5 V
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相关代理商/技术参数 |
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|---|---|
| MJL21196G | 功能描述:两极晶体管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL3281 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS |
| MJL3281A | 功能描述:两极晶体管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL3281A_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS |
| MJL3281AG | 功能描述:两极晶体管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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