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参数资料
| 型号： | MJL4281A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封装： | CASE 340G-02, TO-3PBL, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 55K |
| 代理商： | MJL4281A |
Semiconductor Components Industries, LLC, 2003
July, 2003 Rev. 1
1
Publication Order Number:
MJL4281A/D
MJL4281A (NPN)
MJL4302A (PNP)
Preferred Device
Complementary NPNPNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are PowerBase power transistors
for high power audio.
350 V CollectorEmitter Sustaining Voltage
Gain Complementary:
Gain Linearity from 100 mA to 5 A
High Gain 80 to 240
h
FE
= 50 (min) @ I
C
= 8 A
Low Harmonic Distortion
High Safe Operation Area 1.0 A/100 V @ 1 Second
High f
T
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
350
Vdc
CollectorBase Voltage
V
CBO
350
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
CollectorEmitter Voltage 1.5 V
V
CEX
350
Vdc
Collector Current Continuous
Collector Current
Peak (Note 1)
I
C
15
30
Adc
Base Current Continuous
I
B
1.5
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate Above 25
°
C
P
D
230
1.84
Watts
°
C/W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
R
JC
0.54
°
C/W
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Device
Package
Shipping
ORDERING INFORMATION
MJL4281A
TO264
TO264
CASE 340G
STYLE 2
25 Units/Rail
2
1
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
350 VOLTS
230 WATTS
3
MARKING DIAGRAM
MJL
4xxxA
LLYWW
MJL4xxxA = Device Code
xxx
= 281 OR 302
LL
= Location Code
Y
= Year
WW
= Work Week
Preferred
devices are recommended choices for future use
and best overall value.
MJL4302A
TO264
25 Units/Rail
1 BASE
2 COLLECTOR
3 EMITTER
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJL4281A_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS |
| MJL4281AG | 功能描述:两极晶体管 - BJT 15A 350V 230W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL4281AG | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 350V |
| MJL4302A | 功能描述:两极晶体管 - BJT 15A 350V 230W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL4302AG | 功能描述:两极晶体管 - BJT 15A 350V 230W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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