参数资料
型号: MJL4281A
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: Complementary NPN-PNP Silicon Power Bipolar Transistors
中文描述: 15 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-264AA
封装: CASE 340G-02, TO-3PBL, 3 PIN
文件页数: 3/6页
文件大小: 55K
代理商: MJL4281A
MJL4281A (NPN) MJL4302A (PNP)
http://onsemi.com
3
10
100
1000
0.01
0.1
1
10
100
h
T
J
= 100
°
C
T
J
= 25
°
C
Figure 1. DC Current Gain, V
CE
= 5 V,
NPN MJL4281A
I
C
, COLLECTOR CURRENT (A)
10
100
1000
0.01
0.1
1
10
100
h
Figure 2. DC Current Gain, V
CE
= 5 V,
PNP MJL4302A
I
C
, COLLECTOR CURRENT (A)
T
J
= 100
°
C
T
J
= 25
°
C
10
100
1000
0.01
0.1
1
10
100
h
Figure 3. DC Current Gain, V
CE
= 20 V,
NPN MJL4281A
I
C
, COLLECTOR CURRENT (A)
T
J
= 100
°
C
T
J
= 25
°
C
10
100
1000
0.01
0.1
1
10
100
h
Figure 4. DC Current Gain, V
CE
= 20 V,
PNP MJL4302A
I
C
, COLLECTOR CURRENT (A)
T
J
= 100
°
C
T
J
= 25
°
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01
0.1
1
10
100
Figure 5. Typical Saturation Voltage,
NPN MJL4281A
I
C
, COLLECTOR CURRENT (A)
S
T
J
= 25
°
C
I
c
/I
b
= 10
V
be(sat)
V
ce(sat)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0.1
1
10
100
Figure 6. Typical Saturation Voltage,
PNP MJL4302A
I
C
, COLLECTOR CURRENT (A)
S
T
J
= 25
°
C
I
c
/I
b
= 10
V
be(sat)
V
ce(sat)
TYPICAL CHARACTERISTICS
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相关代理商/技术参数
参数描述
MJL4281A_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS
MJL4281AG 功能描述:两极晶体管 - BJT 15A 350V 230W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJL4281AG 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 350V
MJL4302A 功能描述:两极晶体管 - BJT 15A 350V 230W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJL4302AG 功能描述:两极晶体管 - BJT 15A 350V 230W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2