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参数资料
| 型号： | MJL4281A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封装： | CASE 340G-02, TO-3PBL, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 55K |
| 代理商： | MJL4281A |
MJL4281A (NPN) MJL4302A (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(I
C
= 50 mA, I
B
= 0)
V
CE(sus)
350
Vdc
Collector Cutoff Current
(V
CE
= 200 V, I
B
= 0)
I
CEO
100
Adc
Collector Cutoff Current
(V
CB
= 350 Vdc, I
E
= 0)
I
CBO
50
Adc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
5.0
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1.0 s (nonrepetitive)
(V
CE
= 100 Vdc, t = 1.0 s (nonrepetitive)
I
S/b
4.5
1.0
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 15 Adc, V
CE
= 5.0 Vdc)
h
FE
80
80
80
80
50
10
250
250
250
250
CollectorEmitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
V
CE(sat)
1.0
Vdc
EmitterBase Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 A)
V
BE(sat)
1.4
Vdc
BaseEmitter ON Voltage
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
V
BE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
f
T
35
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1.0
MHz)
C
ob
600
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJL4281A_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS |
| MJL4281AG | 功能描述:两极晶体管 - BJT 15A 350V 230W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL4281AG | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 350V |
| MJL4302A | 功能描述:两极晶体管 - BJT 15A 350V 230W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL4302AG | 功能描述:两极晶体管 - BJT 15A 350V 230W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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