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参数资料
| 型号： | MJL3281A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 15 A, 260 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封装： | PLASTIC, TO-3PBL, TO-264, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 147K |
| 代理商： | MJL3281A |
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
—
50
μ
Adc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
—
—
5
μ
Adc
Emitter Cutoff Current
(VEB = 7 Vdc, IC = 0)
IEBO
—
—
25
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
4
1
—
—
—
—
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
hFE
60
60
60
60
60
45
12
125
—
—
—
115
—
35
175
175
175
175
175
—
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
—
—
3
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
—
30
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
—
—
600
pF
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f
T
PNP MJL1302A
f
T
NPN MJL3281A
IC, COLLECTOR CURRENT (AMPS)
0.1
1.0
10
50
40
30
20
10
0
60
40
30
0
10
0.1
1.0
10
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
20
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
50
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJL3281A_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS |
| MJL3281AG | 功能描述:两极晶体管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL3281AG | 制造商:ON Semiconductor 功能描述:Triac Package/Case:TO-264 |
| MJL4281A | 功能描述:两极晶体管 - BJT 15A 350V 230W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL4281A_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS |
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