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参数资料
| 型号： | MJW1302A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR, TO-247AD |
| 封装： | CASE 340L-02, TO-247, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 91K |
| 代理商： | MJW1302A |
MJW3281A (NPN) MJW1302A (PNP)
http://onsemi.com
5
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 13 and 14 is based on TJ(pk) = 150
°
C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
Figure 15. MJW1302A Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C
Figure 16. MJW3281A Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C
10000
1000
100
100
10
1.0
0.1
10000
1000
100
100
10
1.0
0.1
TJ = 25
°
C
ftest = 1 MHz
Cib
Cob
TJ = 25
°
C
ftest = 1 MHz
Cib
Cob
PNP MJW1302A
NPN MJW3281A
TYPICAL CHARACTERISTICS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJW1302AG | 功能描述:两极晶体管 - BJT 15A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJW16010 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16010A | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJW16012 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16018 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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