ML67Q4050/Q4060 Series
Electrical Characteristics
June 2006, Rev 1.2
Oki Semiconductor 17
DC Characteristics (VDD_CORE = 2.25 to 2.75 V, VDD_IO = 3.0 to 3.6 V, TA = -40 to +85°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input High voltage
VIH
—
2.0
—
VDD_IO + 0.3
V
Input Low voltage
VIL
–0.3
—
0.8
Schmitt trigger input threshold
voltage
VT+
——
VDD_IO x 0.7
VT-
VDD_IO x 0.2
—
Schmitt trigger hysteresis
VHYS
VDD_IO x 0.1
—
Output High
voltage
3-mA buffer [a]
VOH
IOH = –3 mA
——
—
5-mA buffer[a]
IOH = –5 mA
20-mA buffer [b]
IOH = –20 mA
Output Low
voltage
3-mA buffer[a]
VOL
IOL = 3 mA
—
0.40
5-mA buffer[a]
IOL = 5 mA
—
0.40
20-mA buffer[b]
IOL = 20 mA
—
0.45
Input leakage current [c]
IIH/IIL
VI = 0 V / VDD_IO
–10
—
10
A
VI = 0 V,
Pull-up resistance of 50 k
Ω
——
200
Output leakage current
ILO
VO = 0 V / VDD_IO
–10
—
10
a. Pins other than 20-mA SINK pins
b. 20-mA SINK pins
c. The absolute value of leakage current into the device is shown as (+) and current out of the device is shown as (-).
DC Characteristics (VDD_CORE = 2.25 to 2.75 V, VDD_IO = VDD_CORE to 2.75 V, TA = -40 to +85°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input High voltage
VIH
—
1.7
—
VDD_IO + 0.3
V
Input Low voltage
VIL
–0.3
—
0.7
Schmitt trigger input threshold
voltage
VT+
——
VDD_IO x 0.7
VT–
VDD_IO x 0.2
—
Schmitt trigger hysteresis
VHYS
VDD_IO x 0.1
—
Output High
voltage
3-mA buffer [a]
VOH
IOH = –1 mA
——
—
5-mA buffer [a]
20-mA buffer [b]
Output Low
voltage
3-mA buffer [a]
VOL
IOL = 1 mA
—
0.40
5-mA buffer [a]
IOL = 1 mA
—
0.40
20-mA buffer [b]
IOL = 20 mA
—
0.50
Input leakage current [c]
IIH/IIL
VI = 0 V / VDD_IO
–10
—
10
A
VI = 0 V,
Pull-up resistance of 50 k
Ω
——
150
Output leakage current
ILO
VO = 0 V / VDD_IO
–10
—
10
a. Pins other than 20-mA SINK pins
b. 20-mA SINK pins
c. The absolute value of leakage current into the device is shown as (+) and current out of the device is shown as (-).