参数资料
型号: MM908E622ACDWB
厂商: Freescale Semiconductor
文件页数: 31/63页
文件大小: 0K
描述: IC QUAD HALF BRDG TRPL SW 54SOIC
标准包装: 26
应用: 自动镜像控制
核心处理器: HC08
程序存储器类型: 闪存(16 kB)
控制器系列: 908E
RAM 容量: 512 x 8
接口: SCI,SPI
输入/输出数: 12
电源电压: 9 V ~ 16 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 54-BSSOP(0.295",7.50mm 宽)裸露焊盘
包装: 管件
供应商设备封装: 54-SOICW-EP
Analog Integrated Circuit Device Data
Freescale Semiconductor
37
908E622
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
H0EN — H0 Input 2pin Hall-effect Sensor Enable Bit
This read/write bit enables the 2-pin Hall-effect sensor
sense circuitry. Reset clears the H0EN bit.
1 = Hallport H0 is switched on and sensed
0 = Hallport H0 disabled
H0PD — Hallport Pull-up Disable Bit
This read/write bit disables the H0 pull-up resistor. Reset
clears the H0PD bit.
1 = Hallport pull-up resistor on H0 disabled
0 = Hallport pull-up resistor on H0 enabled
H0MS — H0 Mode Select
These read/write bits select the mode of the H0 input.
Reset clears the H0MS bits.
1 = H0 is 2-pin hall sensor input
0 = H0 is general purpose input
Half-bridge Outputs
Outputs HB1:HB4 provide four low resistive half-bridge
output stages. The half-bridges can be used in H-bridge, high
side or low side configurations.
Reset clears all bits in the H-bridge Output Register
(HBOUT), owing to the fact that all half-bridge outputs are
switched off.
HB1:HB4 output features
Short-circuit (over-current) protection on high side and low
side MOSFETs
Current recopy feature (low side MOSFET)
Over-temperature protection
Over-voltage and under-voltage protection
Active clamp on low side MOSFET
Figure 22. Half-bridge Push-Pull Output Driver
Half-bridge Control
Each output MOSFET can be controlled individually. The
general enable of the circuitry is done by setting PSON in the
System Control Register (SYSCTL). The HBx_L and HBx_H
bits form one half-bridge. It is not possible to switch on both
MOSFETs in one half-bridge at the same time. If both bits are
set, the high side MOSFET is in PWM mode.
To avoid both MOSFETs (high side and low side) of one
half-bridge being on at the same time, a break-before-make
circuit exists. Switching the high side MOSFET on is
inhibited, as long as the potential between gate and VSS is
not below a certain threshold. Switching the low side
MOSFET on is blocked as long as the potential between gate
and source of the high side MOSFET did not fall below a
certain threshold.
High Side Driver
Charge Pump
Over-temperature Protection
Over-current Protection
Low Side Driver
Current Recopy
Current Limitation
Active Clamp
Over-current Protection
Control
On/Off
Status
On/Off
Status
PWM
HBx
VSUP
GND
PWM
相关PDF资料
PDF描述
DS2502S+T&R IC OTP 1KBIT 8SOIC
AYF534965 CONN SOCKET FPC 0.5MM 49POS SMD
DS2430A+T&R IC EEPROM 256BIT TO92-3
AYF534865 CONN SOCKET FPC 0.5MM 48POS SMD
DS2502G+U IC ADD-ONLY MEMORY 1KB SFN
相关代理商/技术参数
参数描述
MM908E622ACDWBR2 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge, Triple High Side and EC Glass Driver with Embedded MCU and LIN for High End Mirror
MM908E622ACEK 功能描述:8位微控制器 -MCU QUAD H-B TRIHS EC GLASS RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MM908E622ACPEK 功能描述:IC QUAD HALF BRDG TRPL SW 54SOIC RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器 - 特定应用 系列:- 产品变化通告:Product Discontinuation 26/Aug/2009 标准包装:250 系列:- 应用:网络处理器 核心处理器:4Kc 程序存储器类型:- 控制器系列:- RAM 容量:16K x 8 接口:以太网,UART,USB 输入/输出数:- 电源电压:1.8V, 3.3V 工作温度:- 安装类型:表面贴装 封装/外壳:208-LQFP 包装:带卷 (TR) 供应商设备封装:PG-LQFP-208 其它名称:SP000314382
MM908E622ACPEKR2 功能描述:8位微控制器 -MCU QUAD H-B, TRIHS, EC RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MM908E624 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TRIPLE HIGH-SIDE SWITCH WITH EMBEDDED MCU AND LIN