参数资料
型号: MMBD717LT1G
厂商: ON Semiconductor
文件页数: 2/3页
文件大小: 90K
描述: DIODE SCHOTTKY 200MW 20V SOT323
产品变化通告: Copper Wire Change 29/Oct/2009
标准包装: 1
电压 - 在 If 时为正向 (Vf)(最大): 370mV @ 1mA
电流 - 在 Vr 时反向漏电: 1µA @ 10V
电流 - 平均整流 (Io)(每个二极管): 1mA
电压 - (Vr)(最大): 20V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阳极
安装类型: 表面贴装
封装/外壳: SC-70,SOT-323
供应商设备封装: SC-70-3(SOT323)
包装: 标准包装
其它名称: MMBD717LT1GOSDKR
MMBD717LT1G
http://onsemi.com
2
25°C
125°C
85°C
TA
= 150
°C
NOTES: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F) of 10 mA.
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
3. t
p
? t
rr
+10 V
2 k
820
0.1 F
DUT
VR
100 H
0.1 F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC)
= 1 mA
OUTPUT PULSE
(IF
= I
R
= 10 mA; measured
at iR(REC)
= 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
0.1
0 0.05
VF, FORWARD VOLTAGE (VOLTS)
0.1
10
1.0
85°C
10
0.001
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
1.0
0
0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
0.5
C
T
, CAPACITANCE (pF)
2.0 4.0
I
F
, FORWARD CURRENT (mA)
Figure 2. Typical Forward Voltage Figure 3. Reverse Current versus Reverse Voltage
-°C
25°C
I
R
, REVERSE CURRENT (
μ
A)
-°C
1°C
1°C
100
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
1.0
1.5
2.0
2.5
3.0
6.0 8.0 10 12 14 16 18
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