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参数资料
| 型号： | MMBFJ202D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 文件页数： | 1/13页 |
| 文件大小： | 851K |
| 代理商： | MMBFJ202D87Z |
5
G
D
S
J201
J202
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 52.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
MMBFJ201
MMBFJ202
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
N-Channel General Purpose Amplifier
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
40
V
VGS
Gate-Source Voltage
- 40
V
IGF
Forward Gate Current
50
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
SOT-23
Mark: 62P / 62Q
G
S
D
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
Symbol
Characteristic
Max
Units
J202-203
*MMBFJ202-203
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
J201
/
J202
/
MMBFJ201
/
MMBFJ202
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| MMBFJ211_Q | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
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