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参数资料
| 型号： | MMBT1010LT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | CASE 318D-04, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 47K |
| 代理商： | MMBT1010LT1G |
MMBT1010LT1 MSD1010T1
http://onsemi.com
3
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected
to
a
solder
reflow
process.
mm
inches
2.53.0
0.039
1.0
0.094
0.8
0.0980.118
2.4
0.031
0.95
0.037
0.95
0.037
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SC–59
SC-59/SOT-23 POWER DISSIPATION
The power dissipation of the SC-59/SOT-23 is a function
of the drain pad size. This can vary from the minimum pad
size for soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from the
device junction to ambient; and the operating temperature,
TA. Using the values provided on the data sheet, PD can be
calculated as follows.
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150
°C – 25°C
556
°C/W
= 225 milliwatts
The 556
°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 225 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad
. Using a board material such
as Thermal Clad, the power dissipation can be doubled
using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100
°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10
°C.
The soldering temperature and time should not exceed
260
°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient should be 5
°C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT1010T1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT |
| MMBT1015 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015-BL-AC3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015-BL-AE3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
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