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| 型号： | MMDF1N05ER2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 50V 2A 8-SOIC |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 330pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMDF1N05ER2OSCT |
MMDF1N05E, MVDF1N05E
Power MOSFET
2 A, 50 V, N ? Channel SO ? 8, Dual
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain ? to ? source diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc ? dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
http://onsemi.com
2 AMPERE, 50 VOLTS
R DS(on) = 300 m W
N ? Channel
D
Features
? Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SO ? 8 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed
? Avalanche Energy Specified
? Mounting Information for SO ? 8 Package Provided
? I DSS Specified at Elevated Temperature
? This is a Pb ? Free Device
? MVDF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
8
1
G
S
MARKING
DIAGRAM
8
SO ? 8 F1N05
CASE 751 AYWW G
STYLE 11 G
1
F1N05 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
G = Pb ? Free Package
(Note: Microdot may be in either location)
Drain ? to ? Source Voltage
V DS
50
V
PIN ASSIGNMENT
Gate ? to ? Source Voltage ? Continuous
Drain Current ? Continuous
Drain Current ? Pulsed
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 V, V GS = 10 V, I L = 2 Apk)
V GS
I D
I DM
E AS
± 20
2.0
10
300
V
A
mJ
Source ? 1
Gate ? 1
Source ? 2
Gate ? 2
1 8
2 7
3 6
4 5
Top View
Drain ? 1
Drain ? 1
Drain ? 2
Drain ? 2
Operating and Storage Temperature Range
T J , T stg
? 55 to 150
° C
Total Power Dissipation @ T A = 25 ° C
P D
2.0
W
ORDERING INFORMATION
Thermal Resistance, Junction ? to ? Ambient R q JA 62.5 ° C/W
(Note 1)
Maximum Temperature for Soldering, T L 260 ° C
Time in Solder Bath 10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided) with
one die operating, 10 sec. max.
Device Package Shipping ?
MMDF1N05ER2G SO ? 8 2,500/Tape & Reel
(Pb ? Free)
MVDF1N05ER2G SO ? 8 2,500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
December, 2012 ? Rev. 11
1
Publication Order Number:
MMDF1N05E/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF1N05ER2G | 功能描述:MOSFET NFET SO8D 50V 200mA 300mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
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