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参数资料
| 型号： | MMDF1N05ER2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 50V 2A 8-SOIC |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 330pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMDF1N05ER2OSCT |
MMDF1N05E, MVDF1N05E
1200
1000
V GS
C iss
C rss
0
V DS
T J = 25 ° C
12
10
V DS = 25 V
I D = 1.2 A
800
600
V DS = 0
V GS = 0
8
6
400
200
C iss
C oss
C rss
4
2
0
20
15
10
5
0
5 10 15
20
25
0
0
2
4
6
8
10
12
14
16
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate Charge versus
Gate ? To ? Source Voltage
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area
The FBSOA curves define the maximum drain ? to ? source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
100
10
1
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
Mounted on 2 ″ sq. FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″
thick single sided) with one die operating, 10s max.
10 m s
100 m s
10 ms
dc
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25 ° C
and a maximum junction temperature of 150 ° C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves. ON
Semiconductor Application Note, AN569, “Transient
Thermal Resistance ? General Data and Its Use” provides
detailed instructions.
0.1
0.01
0.1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Forward Biased
100
Safe Operating Area
10
1
D = 0.5
0.2
0.1
0.1
0.05
Normalized to q ja at 10s.
0.02
Chip
0.0175 W
0.0710 W
0.2706 W
0.5776 W
0.7086 W
0.01
0.01
SINGLE PULSE
0.0154 F
0.0854 F
0.3074 F
1.7891 F
107.55 F
Ambient
0.001
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t, TIME (s)
Figure 10. Thermal Response
http://onsemi.com
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF1N05ER2G | 功能描述:MOSFET NFET SO8D 50V 200mA 300mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
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