参数资料
型号: MMDF1N05ER2G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CHAN DUAL 2A 50V 8SOIC
标准包装: 1
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 300 毫欧 @ 1.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 12.5nC @ 10V
输入电容 (Ciss) @ Vds: 330pF @ 25V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
其它名称: MMDF1N05ER2GOSDKR
MMDF1N05E, MVDF1N05E
TYPICAL ELECTRICAL CHARACTERISTICS
10
10 V
6V
8V
T J = 25 ° C
5V
10
V DS ≥ 10 V
- 55 ° C
25 ° C
8
6
4
4.5 V
4V
8
6
4
25 ° C
100 ° C
2
V GS = 3.5 V
2
0
0
2
4 6 8
10
0
0
1
100 ° C
2
- 55 ° C
3
4
5
6
7
8
0.5
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
1.8
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.4
0.3
V GS = 10 V
1.6
1.4
1.2
1
V GS = 10 V
I D = 1.5 A
0.2
100 ° C
25 ° C
0.8
0.6
0.1
- 55 ° C
0.4
0.2
0
0
2
4
6
8
0
- 50
- 25
0
25
50
75
100
125
150
0.5
0.4
0.3
0.2
0.1
I D , DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus Drain Current
I D = 1.5 A
T J , JUNCTION TEMPERATURE ( ° C)
Figure 4. On ? Resistance Variation with Temperature
1.2
V DS = V GS
I D = 1 mA
1.1
1
0.9
0.8
0
2
3
4 5 6 7 8
9
10
0.7
- 50
- 25
0
25
50
75
100
125
150
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On Resistance versus
Gate ? To ? Source Voltage
http://onsemi.com
3
T J , JUNCTION TEMPERATURE ( ° C)
Figure 6. Gate Threshold Voltage Variation
with Temperature
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