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参数资料
| 型号： | MMDF1N05ER2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 2A 50V 8SOIC |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 330pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | MMDF1N05ER2GOSDKR |
MMDF1N05E, MVDF1N05E
1200
1000
V GS
C iss
C rss
0
V DS
T J = 25 ° C
12
10
V DS = 25 V
I D = 1.2 A
800
600
V DS = 0
V GS = 0
8
6
400
200
C iss
C oss
C rss
4
2
0
20
15
10
5
0
5 10 15
20
25
0
0
2
4
6
8
10
12
14
16
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate Charge versus
Gate ? To ? Source Voltage
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area
The FBSOA curves define the maximum drain ? to ? source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
100
10
1
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
Mounted on 2 ″ sq. FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″
thick single sided) with one die operating, 10s max.
10 m s
100 m s
10 ms
dc
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25 ° C
and a maximum junction temperature of 150 ° C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves. ON
Semiconductor Application Note, AN569, “Transient
Thermal Resistance ? General Data and Its Use” provides
detailed instructions.
0.1
0.01
0.1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Forward Biased
100
Safe Operating Area
10
1
D = 0.5
0.2
0.1
0.1
0.05
Normalized to q ja at 10s.
0.02
Chip
0.0175 W
0.0710 W
0.2706 W
0.5776 W
0.7086 W
0.01
0.01
SINGLE PULSE
0.0154 F
0.0854 F
0.3074 F
1.7891 F
107.55 F
Ambient
0.001
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t, TIME (s)
Figure 10. Thermal Response
http://onsemi.com
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
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