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| 型号： | MMDF2P02ER2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CH 25V 2.5A 8-SOIC |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 475pF @ 16V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
MMDF2P02E
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (N ote 3)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
25
?
?
?
?
?
2.2
?
?
?
?
?
1.0
10
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 2.0 Adc)
(V GS = 4.5 Vdc, I D = 1.0 Adc)
Forward Transconductance (V DS = 3.0 Vdc, I D = 1.0 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
1.0
2.0
3.8
0.19
0.3
2.8
3.0
?
0.25
0.4
?
Vdc
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
340
475
pF
Output Capacitance
Transfer Capacitance
(V DS = 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
220
75
300
150
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
t d(on)
?
20
40
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 10 Vdc, I D = 2.0 Adc,
V GS = 5.0 Vdc, R G = 6.0 W )
(V DD = 10 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc, R G = 6.0 W )
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
40
53
41
13
29
30
28
80
106
82
26
58
60
56
Gate Charge
(V DS = 16 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
10
1.0
3.5
3.0
15
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 4)
Reverse Recovery Time
See Figure 11
Reverse Recovery Storage Charge
(I S = 2.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
1.5
32
19
12
0.035
2.0
64
?
?
?
Vdc
ns
m C
3. Negative sign for P ? Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
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相关代理商/技术参数 |
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| MMDF2P02ER2G-ND | 制造商:ON Semiconductor 功能描述: |
| MMDF2P02HD | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual |
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