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参数资料
| 型号： | MMDF7N02ZR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 5/12页 |
| 文件大小： | 111K |
| 代理商： | MMDF7N02ZR2 |
MMDF7N02Z
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
Vdc
Gate–to–Source Voltage – Continuous
VGS
±12
Vdc
Drain Current
Continuous @ TA = 25°C (Note 1.)
Continuous @ TA = 70°C (Note 1.)
Pulsed Drain Current (Note 3.)
ID
IDM
7.0
4.6
35
Adc
Total Power Dissipation @ TA = 25°C (Note 1.)
Linear Derating Factor @ TA = 25°C (Note 1.)
PD
2.0
16
Watts
mW/
°C
Total Power Dissipation @ TA = 25°C (Note 2.)
Linear Derating Factor @ TA = 25°C (Note 2.)
PD
1.39
11.11
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
THERMAL RESISTANCE
Parameter
Symbol
Typ
Max
Unit
Junction–to–Ambient (Note 1.)
Junction–to–Ambient (Note 2.)
RqJA
–
62.5
90
°C/W
1. When mounted on 1
″ square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
2. When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
3. Repetitive rating; pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (Notes 4. & 5.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
–
15
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
1.0
10
Adc
Gate–Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)
IGSS
–
3.0
Adc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Notes 4. & 5.)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
–
0.7
2.5
1.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (Notes 4. & 5.)
(VGS = 4.5 Vdc, ID = 7.0 Adc)
(VGS = 2.5 Vdc, ID = 3.5 Adc)
RDS(on)
–
23
30
27
35
m
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) (Note 4.)
gFS
5.0
11
–
Mhos
4. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
5. Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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