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参数资料
| 型号： | MMDFS3P303R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/12页 |
| 文件大小： | 257K |
| 代理商： | MMDFS3P303R2 |
MMDFS3P303
10
Motorola TMOS Product Preview Data
TYPICAL APPLICATIONS
Vin
+
–
MULTIPLE BATTERY CHARGERS
BATT #1
BATT #2
D2
D3
Q2
Q3
Buck Regulator/Charger
CO
LO
Q1
D1
Li–lon BATTERY PACK APPLICATIONS
Battery Pack
DISCHARGE
CHARGE
SMART IC
Li–Ion
BATTERY
CELLS
PACK +
PACK –
SCHOTTKY
Q1
Q2
Applicable in battery packs which require a high current level.
During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.
During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.
Under normal operation, both transistors are on.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMDJ3N03BJT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications |
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
| MMDJ-65608EV-30 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-30-E | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
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