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参数资料
| 型号： | MMDFS3P303R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 7/12页 |
| 文件大小： | 257K |
| 代理商： | MMDFS3P303R2 |
MMDFS3P303
4
Motorola TMOS Product Preview Data
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
6.0
5.0
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
5.0
1.5
3.0
2.0
1.0
0
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.7
0.2
0.1
0
ID, DRAIN CURRENT (AMPS)
1.5
1.0
0.18
0.08
0.06
0.04
2.0
–25
25
–50
TJ, JUNCTION TEMPERATURE (°C)
1.2
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
30
0
1000
1.0
15
0
I D
,DRAIN
CURRENT
(AMPS)
I
R
1.0
0
0.5
0.25
0.75
1.0
1.25
1.5
2.0
3.5
4.5
6.0
4.0
6.0
2.5
3.0
3.5
4.0
4.5
5.5
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
100
75
0.8
10
I DSS
,LEAKAGE
(nA)
1.75
,DRAIN
CURRENT
(AMPS)
D
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
R
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
125
150
1.4
1.8
VGS = 10 V
ID = 1.5 A
VGS = 0 V
TJ = 125°C
100
°C
TJ = 25°C
VGS = 4.5 V
10 V
TJ = 25°C
ID = 3.5 A
VDS ≥ 10 V
TJ = – 55°C
100
°C
25
°C
TJ = 25°C
3.3 V
VGS = 2.7 V
4.5 V
5.0 V
2.0
4.0
3.0
3.5 V
100
20
25
4.0
5.0
3.0 V
3.7 V
4.0 V
6.0 V
0.3
0.4
0.5
0.6
2.5
3.0
4.0
5.0
0.14
0.12
0.10
0.16
0.6
1.0
1.6
10 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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