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参数资料
| 型号： | MMDFS3P303R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 8/12页 |
| 文件大小： | 257K |
| 代理商： | MMDFS3P303R2 |
MMDFS3P303
5
Motorola TMOS Product Preview Data
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5.0
30
–10
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1200
800
1000
600
QG, TOTAL GATE CHARGE (nC)
14
0
6.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0
2.5
2.0
1.5
1.0
0.5
0
0.2
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.1
0.01
TJ, STARTING JUNCTION TEMPERATURE (°C)
50
150
25
350
300
50
0
1.0
C,
CAP
ACIT
ANCE
(pF)
V
400
200
0
– 5.0
0
10
4.0
8.0
12
10
0.4
0.8
1.0
,DRAIN
CURRENT
(AMPS)
I D
10
1.0
75
100
125
100
E
AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
15
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
GS
t,TIME
(ns)
I
,SOURCE
CURRENT
(AMPS)
S
100
10
100
10
8.0
150
200
250
A
V
ALANCHE
ENERGY
(mJ)
ID = 3.5 A
TJ = 25°C
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
ID = 3.5 A
TJ = 25°C
VDS
VGS
QT
Q2
Q1
Q3
td(off)
td(on)
tr
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
VGS = 12 V
SINGLE PULSE
TA = 25°C
VGS
VDS
0
25
20
10
20
25
1.0
10 ms
1.0 ms
VGS = 0
VDS = 0
15
5.0
2.0
6.0
10
0.6
450
400
VGS = 10 V
TJ = 25°C
ID = 2.0 A
VDD = 15 V
tf
V
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
DS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
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| MMDJ-65608EV-30-E | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
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