- 您现在的位置：买卖IC网 > Datasheet目录136 > MMDL770T1G (ON Semiconductor)DIODE SCHOTTKY 70V SOD-323 Datasheet资料下载
参数资料
| 型号： | MMDL770T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 84K |
| 描述： | DIODE SCHOTTKY 70V SOD-323 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 产品目录绘图： | Rectifer SOD-323 |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 70V |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 10mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 200nA @ 35V |
| 电容@ Vr, F： | 1pF @ 20V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 1568 (CN2011-ZH PDF) |
| 其它名称： | MMDL770T1GOSDKR |
              ? Semiconductor Components Industries, LLC, 2011 June, 2011 ? Rev. 3 1 Publication Order Number: MMDL770T1/D MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high?efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features ? Extremely Low Minority Carrier Lifetime ? Very Low Capacitance ? 1.0 pF @ 20 V ? Low Reverse Leakage ? 200 nA (max) ? High Reverse Voltage ? 70 V (min) ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board, (Note 1) @TA = 25 °C Derate above 25°C PD 200 1.57 mW mW/°C Thermal Resistance, Junction?to?Ambient RJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR?5 Minimum Pad 1.0 pF SCHOTTKY BARRIER DIODE Device Package Shipping? ORDERING INFORMATION 1 CATHODE 2 ANODE MMDL770T1G SOD?323 (Pb?Free) 3000 / Tape & Reel ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com SOD?323 CASE 477 STYLE 1 5H = Device Code M = Date Code* = Pb?Free Package *Date Code orientation may vary depending upon manufacturing location. MARKING DIAGRAM (Note: Microdot may be in either location) 1 2 5H M |
相关PDF资料 |
PDF描述 |
|---|---|
| MMDL914T3G | DIODE SW HS 100V 200MA SOD-323 |
| MMSD103T1 | DIODE SWITCHING 250V SOD-123 |
| MMSD3070 | DIODE 200V 200MA SOD123 |
| MMSD4148_D87Z | DIODE SS 100V 200MA SOD-123 |
| MMSD4448 | DIODE 100V 200MA SOD123 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDL914 | 功能描述:二极管 - 通用，功率，开关 100V 200mA 4pF RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMDL914T1 | 功能描述:二极管 - 通用，功率，开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMDL914T1G | 功能描述:二极管 - 通用，功率，开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMDL914T1G | 制造商:ON Semiconductor 功能描述:SWITCHING DIODE 200mA 100V SOD-323 |
| MMDL914T1G_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High-Speed Switching Diode |
发布紧急采购，3分钟左右您将得到回复。