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参数资料
| 型号： | MMDT4413 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-6 |
| 文件页数： | 1/7页 |
| 文件大小： | 453K |
| 代理商： | MMDT4413 |
MMDT4413
NPN/PNP Multi-Chip Transistor
FEATURES
Ideal for Low Power Amplification and Switching
Complementary Pair
One 4401-Type NPN
One 4403-Type PNP
MECHANICAL DATA
Case: SOT-363 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
NPN 4401_Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
600
mA
Collector Power Dissipation
PC
200
mW
Thermal Resistance, Junction to Ambient
RΘJA
625
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
NPN 4401_Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=100A,IE=0
VCBO
60
V
Collector-emitter breakdown voltage
IC=1mA,IB=0
VCEO
40
V
Emitter-base breakdown voltage
IE=100A,IC=0
VEBO
6
V
Collector-base cut-off current
VCB=50V,IE=0
ICBO
0.1
uA
Collector-emitter cut-off current
VCE=35V,IB=0
ICEO
0.5
uA
Emitter-base cut-off current
VEB=5V,IC=0
IEBO
0.1
uA
VCE=1V,IC=0.1mA
hFE1
20
V
VCE=1V,IC=1mA
hFE2
40
V
VCE=1V,IC=10mA
hFE3
80
V
VCE=1V,IC=150mA
hFE4
100
300
V
DC current gain
VCE=2V,IC=500mA
hFE5
40
V
IC=150mA,IB=15mA
VCE(sat)1
0.4
V
Collector-emitter saturation voltage
IC=500mA,IB=50mA
VCE(sat)2
0.75
V
IC=150mA,IB=15mA
VBE(sat)1
0.75
0.95
V
Base-emitter saturation voltage
IC=500mA,IB=50mA
VBE(sat)2
1.2
V
Transition frequency
VCE=10V,IC=20mA,
f=100MHz
fT
250
MHz
Collector output capacitance
VCB=5V,IE=0,f=1MHz
Cob
6.5
pF
Delay time
Td
15
nS
Rise time
VCC=30V, VBE=2V
IC=150mA , IB1=15mA
Tr
20
nS
Storage time
Ts
225
nS
Fall time
VCC=30V, IC=150mA
IB1=-IB2=15mA
Tf
30
nS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT4413_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4413_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4413-7 | 功能描述:两极晶体管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT4413-7-F | 功能描述:两极晶体管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT4944 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Dual-Chip Plastic Encapsulated Transistor |
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