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参数资料
| 型号： | MMDT4413 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-6 |
| 文件页数： | 2/7页 |
| 文件大小： | 453K |
| 代理商： | MMDT4413 |
PNP 4403_Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-600
mA
Collector Power Dissipation
PC
200
mW
Thermal Resistance, Junction to Ambient
RΘJA
625
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
PNP 4403_Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=-100A,IE=0
VCBO
-40
V
Collector-emitter breakdown voltage
IC=-1mA,IB=0
VCEO
-40
V
Emitter-base breakdown voltage
IE=-100A,IC=0
VEBO
-5
V
Collector-base cut-off current
VCB=-50V,IE=0
ICBO
-0.1
uA
Collector-emitter cut-off current
VCE=-35V,IB=0
ICEO
-0.5
uA
Emitter-base cut-off current
VEB=-5V,IC=0
IEBO
-0.1
uA
VCE=-1V,IC=-0.1mA
hFE1
30
V
VCE=-1V,IC=-1mA
hFE2
60
V
VCE=-1V,IC=-10mA
hFE3
100
V
VCE=-2V,IC=-150mA
hFE4
100
300
V
DC current gain
VCE=-2V,IC=-500mA
hFE5
20
V
IC=-150mA,IB=-15mA
VCE(sat)1
-0.4
V
Collector-emitter saturation voltage
IC=-500mA,IB=-50mA
VCE(sat)2
-0.75
V
IC=-150mA,IB=-15mA
VBE(sat)1
-0.75
-0.95
V
Base-emitter saturation voltage
IC=-500mA,IB=-50mA
VBE(sat)2
-1.3
V
Transition frequency
VCE=-10V,IC=-20mA,
f=100MHz
fT
200
MHz
Collector output capacitance
VCB=-10V,IE=0,f=1MHz
Cob
8.5
pF
Delay time
Td
15
nS
Rise time
VCC=-30V, VBE=-2V
IC=-150mA , IB1=-15mA
Tr
20
nS
Storage time
Ts
225
nS
Fall time
VCC=-30V, IC=-150mA
IB1=-IB2=-15mA
Tf
30
nS
REV. 1, Oct-2010, KSTR07
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT4413_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4413_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4413-7 | 功能描述:两极晶体管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT4413-7-F | 功能描述:两极晶体管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT4944 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Dual-Chip Plastic Encapsulated Transistor |
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