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参数资料
| 型号： | MMDT4413T/R7 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 8/9页 |
| 文件大小： | 221K |
| 代理商： | MMDT4413T/R7 |
PAGE . 8
STAD-MAR.27.2007
MMDT4413
1
100
1000
1
10
100
1000
hFE,
DC
CURRENT
GAIN
(N
O
RMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 11 DC Current Gain vs. Collector Current (4403)
10
V= 5V
CE
T= 25°C
A
T = -50°C
A
T = 150°C
A
1
100
1000
1
10
100
f
,
GAIN
BANDWIDTH
PR
O
DUCT
(MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 12 Gain Bandwidth Product vs. Collector Current (4403)
10
V
= 5V
CE
0
50
100
25
50
75
100
125
150
175
200
P
,
POWER
DISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 13, Max Power Dissipation vs
Ambient Temperature (4403)
150
200
250
300
350
0
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