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参数资料
| 型号： | MMFT2N02ELT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 代理商： | MMFT2N02ELT1 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Field Effect Transistor
N–Channel Enhancement Mode
Silicon Gate TMOS E–FET
t
SOT–223 for Surface Mount
This advanced E–FET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This device is also designed with a low threshold
voltage so it is fully enhanced with 5 Volts. This new energy efficient
device also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, dc–dc converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.
The device is housed in the SOT–223 package which is designed
for medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
Low Drive Requirement to Interface Power Loads to Logic
Level ICs, VGS(th) = 2 Volts Max
Low RDS(on) — 0.15 max
The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT2N02ELT1 to order the 7 inch/1000 unit reel.
Use MMFT2N02ELT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
±15
Vdc
Drain Current — Continuous
Drain Current — Pulsed
ID
IDM
1.6
6.4
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD(1)
0.8
6.4
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 65 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 10 V, VGS = 5 V, Peak IL= 2 A, L = 0.2 mH, RG = 25 )
EAS
66
mJ
DEVICE MARKING
2N02L
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
R
θJA
156
°C/W
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Order this document
by MMFT2N02EL/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MMFT2N02EL
MEDIUM POWER
LOGIC LEVEL TMOS FET
1.6 AMP
20 VOLTS
RDS(on) = 0.15 OHM
Motorola Preferred Device
CASE 318E–04, STYLE 3
TO–261AA
D
S
G
2,4
3
1
2
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT2N25E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055EL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
| MMFT3055ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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