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参数资料
| 型号： | MMFT2N02ELT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 代理商： | MMFT2N02ELT1 |
MMFT2N02EL
3
Motorola TMOS Power MOSFET Transistor Device Data
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
10
Figure 1. On Region Characteristics
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25°C
10
Figure 2. Gate–Threshold Voltage Variation
With Temperature
TJ, JUNCTION TEMP (°C)
Figure 3. Transfer Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus
Gate–to–Source Voltage
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. On–Resistance versus Junction
Temperature
TJ, JUNCTION TEMPERATURE (°C)
VDS = VGS
ID = 1 mA
I D
,DRAIN
CURRENT
(AMPS)
8
6
4
2
0
5
4
3
2
1
0
V
GS(TH)
,GA
TE
THRESHOLD
VOL
TAGE
(NORMALIZED)
1.1
– 50
1
0.9
0.8
0.7
0
50
100
150
VDS = 8 V
I D
,DRAIN
CURRENT
(AMPS)
8
6
2
0
7
6
4
2
0
0.3
0
0.2
0.15
0.1
0
1
2
3
4
TJ = – 55°C
100
°C
25
°C
0.25
– 55
°C
0.5
0.4
0.3
0.1
0
8
6
5
4
3
2
0.3
– 50
0.1
0
50
100
150
0.4
0.2
7
4
0.05
0.5
0.2
7
6
5
4.5
4
3.5
3
TJ = 100°C
25
°C
TJ = 25°C
ID = 1.6 A
VGS = 5 V
ID = 1.6 A
VGS = 5 V
1.2
VGS = 2.5 V
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