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参数资料
| 型号： | MMFT2N02ELT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 代理商： | MMFT2N02ELT1 |
MMFT2N02EL
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 A)
V(BR)DSS
20
—
Vdc
Zero Gate Voltage Drain Current, (VDS = 20 V, VGS = 0)
IDSS
—
10
Adc
Gate–Body Leakage Current, (VGS = 15 V, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
VGS(th)
1
—
2
Vdc
Static Drain–to–Source On–Resistance, (VGS = 5 V, ID = 0.8 A)
RDS(on)
—
0.15
Ohms
Drain–to–Source On–Voltage, (VGS = 5 V, ID = 1.6 A)
VDS(on)
—
0.32
Vdc
Forward Transconductance, (VDS = 10 V, ID = 0.8 A)
gFS
—
2.6
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 15 V,
VGS = 0,
f = 1 MHz)
Ciss
—
580
—
pF
Output Capacitance
(VDS = 15 V,
VGS = 0,
f = 1 MHz)
Coss
—
430
—
pF
Reverse Transfer Capacitance
f = 1 MHz)
Crss
—
250
—
SWITCHING CHARACTERISTICS
Turn–On Delay Time
(VDD = 15 V, ID = 1.6 A
VGS = 5 V, RG = 50 ohms,
RGS = 25 ohms)
td(on)
—
16
—
ns
Rise Time
(VDD = 15 V, ID = 1.6 A
VGS = 5 V, RG = 50 ohms,
RGS = 25 ohms)
tr
—
73
—
ns
Turn–Off Delay Time
VGS = 5 V, RG = 50 ohms,
RGS = 25 ohms)
td(off)
—
77
—
ns
Fall Time
GS = 25 ohms)
tf
—
107
—
Total Gate Charge
(VDS = 16 V, ID = 1.6 A,
VGS = 5 Vdc)
See Figures 15 and 16
Qg
—
20
—
nC
Gate–Source Charge
(VDS = 16 V, ID = 1.6 A,
VGS = 5 Vdc)
See Figures 15 and 16
Qgs
—
1.7
—
nC
Gate–Drain Charge
See Figures 15 and 16
Qgd
—
6
—
SOURCE DRAIN DIODE CHARACTERISTICS(1)
Forward On–Voltage
IS = 1.6 A, VGS = 0
VSD
—
0.9
—
Vdc
Forward Turn–On Time
IS = 1.6 A, VGS = 0,
dlS/dt = 400 A/s,
VR = 16 V
ton
Limited by stray inductance
Reverse Recovery Time
dlS/dt = 400 A/s,
VR = 16 V
trr
—
55
—
ns
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%
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