
MMSF10N02Z
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
17
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
IGSS
—
0.6
1.5
Adc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
—
0.72
2.86
1.1
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(3)
(VGS = 4.5 Vdc, ID = 10 Adc)
(VGS = 2.7 Vdc, ID = 5.0 Adc)
RDS(on)
—
13
16
15
19
m
Forward Transconductance (VDS = 9.0 Vdc, ID = 5.0 Adc)
gFS
11
14
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
10 Vdc V
0 Vdc
Ciss
—
1150
1225
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
775
810
Transfer Capacitance
f = 1.0 MHz)
Crss
—
375
480
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
10 Vd
I
5 0 Ad
td(on)
—
65
75
ns
Rise Time
(VDD = 10 Vdc, ID = 5.0 Adc,
tr
—
360
440
Turn–Off Delay Time
( DD
, D
,
VGS = 4.0 Vdc, RG = 10 )
td(off)
—
325
640
Fall Time
tf
—
575
860
Gate Charge
(V
16 Vd
I
10 Ad
QT
—
26
32
nC
(VDS = 16 Vdc, ID = 10 Adc,
Q1
—
2.5
—
( DS
, D
,
VGS = 4.0 Vdc)
Q2
—
13
—
Q3
—
9.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.83
0.68
1.2
—
Vdc
Reverse Recovery Time
(I
10 Adc V
0 Vdc
trr
—
765
—
ns
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
240
—
dIS/dt = 100 A/s)
tb
—
530
—
Reverse Recovery Storage Charge
QRR
—
8.7
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA