参数资料
型号: MMSF10N02ZR2
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 4/10页
文件大小: 184K
代理商: MMSF10N02ZR2
MMSF10N02Z
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.4
1.6
2
0
2
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.02
0.025
0
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
25
°C
100
°C
0.015
8
4
0.005
TJ = 25°C
4
8
10
2
1
1.5
2
2.5
0.01
13
5
9
11
10
0
5
10
15
17.5
20
2.5
0
0.01
0.02
6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
7
4.5 V
VGS = 2.7 V
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.4
0.8
1.2
1.6
VGS =4.5 V
ID = 5 A
125
75
25
–25
VGS = 0 V
TJ = 125°C
100
°C
1.2
10
1.8 V
1.5 V
1.6 V
ID = 10 A
TJ = 25°C
1.7 V
0.5
0
2
0.005
0.015
0.025
1000
0.8
0.2
1.4
1.8
1
0.6
12
14
16
18
20
1.9 V
4.5 V
VGS = 12V
TJ = 25°C
12
14
0.03
345
6
7
89
10
11
12
0.03
13
15
0.2
0.6
1
1.4
10000
0.1
0.01
25
°C
12.5
7.5
2.7 V
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