- 您现在的位置：买卖IC网 > PDF目录133003 > MMUN2130LT3 (MOTOROLA INC) 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PDF资料下载
参数资料
| 型号： | MMUN2130LT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 文件页数： | 3/10页 |
| 文件大小： | 188K |
| 代理商： | MMUN2130LT3 |
MMUN2111LT1 SERIES
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DEVICE MARKING AND RESISTOR VALUES (Continued)
Device
Marking
R1 (K)
R2 (K)
MMUN2116LT1(2)
MMUN2130LT1(2)
MMUN2131LT1(2)
MMUN2132LT1(2)
MMUN2133LT1(2)
MMUN2134LT1(2)
A6F
A6G
A6H
A6J
A6K
A6L
4.7
1.0
2.2
4.7
22
∞
1.0
2.2
4.7
47
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
500
nAdc
Emitter-Base Cutoff Current
MMUN2111LT1
(VEB = 6.0 V, IC = 0)
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
IEBO
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
—
Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
MMUN2111LT1
(VCE = 10 V, IC = 5.0 mA)
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
hFE
35
60
80
160
3.0
8.0
15
80
60
100
140
250
5.0
15
27
140
130
—
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1
(IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
VCE(sat)
—
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
VOL
—
0.2
Vdc
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
MMUN2113LT1
—
0.2
2. New devices. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
相关PDF资料 |
PDF描述 |
|---|---|
| MPSW42ZL1 | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MG600Q1US45 | 600 A, 1200 V, N-CHANNEL IGBT |
| MG75Q2YS11 | 75 A, 1200 V, N-CHANNEL IGBT |
| MPS651RLRE | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS6507RL1 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2130RLT1 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2131 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2131L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k |
| MMUN2131LT1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMUN2131LT1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。