参数资料
型号: MOBILE AMD-K6
厂商: Advanced Micro Devices, Inc.
英文描述: 32 Bit Microprocessor With 64-K Byte Level-one Cache and Advanced RISC86 Superscalar Microarchitecture(32位微处理器带64K字节高速缓存和高级的RISC86超标量微体系结构)
中文描述: 32位微处理器的64亩字节的一级缓存和高级RISC86超标微架构(32位微处理器带64K的字节高速缓存和高级的RISC86超标量微体系结构)
文件页数: 15/108页
文件大小: 2267K
代理商: MOBILE AMD-K6
Chapter 2
Internal Architecture
5
21049H/0—September 1998
Mobile AMD-K6
Processor Data Sheet
Preliminary Information
2
Internal Architecture
2.1
Introduction
The mobile AMD-K6 processor implements advanced design
techniques known as the RISC86 microarchitecture. The
RISC86 microarchitecture is a decoupled decode/execution
design approach that yields superior sixth-generation
performance for x86-based software. This chapter describes the
techniques used and the functional elements of the RISC86
microarchitecture.
2.2
Mobile AMD-K6
Processor Microarchitecture Overview
When discussing processor design, it is important to understand
the terms
architecture
,
microarchitecture
, and
design
implementation
. The term
architecture
refers to the instruction
set and features of a processor that are visible to software
programs running on the processor. The architecture
determines what software the processor can run. The
architecture of the mobile AMD-K6 processor is the
industry-standard x86 instruction set.
The term
microarchitecture
refers to the design techniques used
in the processor to reach the target cost, performance, and
functionality goals. The mobile AMD-K6 is based on a
sophisticated RISC core known as the Enhanced RISC86
microarchitecture. The Enhanced RISC86 microarchitecture is
an advanced, second-order decoupled decode/execution design
approach that enables industry-leading performance for
x86-based software.
The term
design implementation
refers to the actual logic and
circuit designs from which the processor is created according to
the microarchitecture specifications.
相关PDF资料
PDF描述
MP028F036M12AL PRM Regulator 28 Vdc Input
MP151 15 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
MP1505 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes)
MP156 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes)
MP158 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes)
相关代理商/技术参数
参数描述
MOBP01-SR1 功能描述:PROGRAMMER FLASH 49K/77G/78A RoHS:是 类别:编程器,开发系统 >> 过时/停产零件编号 系列:- 标准包装:1 系列:- 类型:MCU 适用于相关产品:Freescale MC68HC908LJ/LK(80-QFP ZIF 插口) 所含物品:面板、缆线、软件、数据表和用户手册 其它名称:520-1035
MOBZ 制造商:MMD 制造商全称:MMD Components 功能描述:Oven Controlled Oscillator
MOC119 功能描述:晶体管输出光电耦合器 Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
MOC119_Q 功能描述:晶体管输出光电耦合器 Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
MOC119300 功能描述:晶体管输出光电耦合器 6-Pin Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk