参数资料
型号: MPC5125YVN200
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 200 MHz, MICROCONTROLLER, PBGA324
封装: 23 X 23 MM, 2.25 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, PLASTIC, MS-034AJJ-1, TEPBGA-324
文件页数: 31/92页
文件大小: 640K
代理商: MPC5125YVN200
Electrical and Thermal Characteristics
MPC5125 Microcontroller Data Sheet, Rev. 3
Freescale Semiconductor
37
4.1.3
DC Electrical Specifications
Table 6 gives the DC electrical characteristics for the MPC5125 at recommended operating conditions.
Supply voltage — standard I/O buffers
VDD_IO
3.0
3.3
3.6
V
D2.3
Supply voltage — memory I/O buffers
(DDR)
VDD_IO_MEM_DDR
2.3
2.5
2.7
V
D2.4
Supply voltage — memory I/O buffers
(DDR2, LPDDR, Mobile SDR)
VDD_IO_MEM_DDR2
VDD_IO_MEM_LPDDR
1.7
1.8
1.9
V
D2.5
Supply voltage — memory I/O buffers
(SDR)
VDD_IO_MEM_SDR
3.0
3.3
3.6
V
D2.19
Input reference voltage (DDR/DDR2)
MVREF
0.49 ×
VDD_IO_MEM
0.50
×
VDD_IO_MEM
0.51
×
VDD_IO_MEM
VD2.6
Termination voltage (DDR2)
MVTT
MVREF – 0.04
MVREF
MVREF + 0.04
VD2.7
Supply voltage — system APLL
AVDD_SPLL
3.0
3.3
3.6
V
D2.8
Supply voltage — system oscillator
and temperature sensor
AVDD_OSC_TMPS
3.0
3.3
3.6
V
D2.9
Supply voltage — e300 APLL
AVDD_CPLL
3.0
3.3
3.6
V
D2.10
Supply voltage — RTC (hibernation)
VBAT
3
3.0
3.3
3.6
V
D2.11
Supply voltage — FUSE programming
AVDD_FUSEWR
3.0
3.3
3.6
V
D2.12
Input voltage — standard I/O buffers
Vin
0—
VDD_IO
V
D2.14
Input voltage — memory I/O buffers
(DDR)
Vin_DDR
0
VDD_IO_
MEM_DDR
V
D2.15
Input voltage — memory I/O buffers
(DDR2)
Vin_DDR2
0
VDD_IO_
MEM_DDR2
V
D2.16
Input voltage — memory I/O buffers
(SDR)
Vin_SDR
0
VDD_IO_
MEM_SDR
V
D2.20
Input voltage — memory I/O buffers
(LPDDR)
Vin_LPDDR
0
VDD_IO_
MEM_LPDDR
V
D2.18
Ambient operating temperature range
TA
–40
+85
oC
D2.17
NOTES:
1 These are recommended and tested operating conditions. Proper device operation outside these conditions is not guaranteed.
2 The State Retention voltage can be applied to VDD after the device is placed in deep-sleep mode.
3 VBAT should not be supplied by a battery of voltage less than 3.0 V.
Table 6. DC Electrical Specifications
Characteristic
Condition
Sym
Min
Max
Unit SpecID
Input high voltage
Input type = TTL VDD_IO
VIH
0.51
× V
DD_IO
—V
D3.1
Input high voltage
Input type = TTL
VDD_IO_MEM_DDR
VIH
MVREF + 0.15
V
D3.2
Table 5. Recommended Operating Conditions (continued)
Characteristic
Sym
Min1
Typ
Max1
Unit
SpecID
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