参数资料
型号: MPC5554MZP80
厂商: Freescale Semiconductor
文件页数: 58/58页
文件大小: 0K
描述: IC MCU 32BIT 2MB FLASH 416PBGA
标准包装: 40
系列: MPC55xx Qorivva
核心处理器: e200z6
芯体尺寸: 32-位
速度: 82MHz
连通性: CAN,EBI/EMI,SCI,SPI
外围设备: DMA,POR,PWM,WDT
输入/输出数: 256
程序存储器容量: 2MB(2M x 8)
程序存储器类型: 闪存
RAM 容量: 64K x 8
电压 - 电源 (Vcc/Vdd): 1.35 V ~ 1.65 V
数据转换器: A/D 40x12b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 416-BBGA
包装: 托盘
Electrical Characteristics
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
9
3.5
ESD (Electromagnetic Static Discharge) Characteristics
3.6
Voltage Regulator Controller (VRC) and
Power-On Reset (POR) Electrical Specifications
The following table lists the VRC and POR electrical specifications:
Table 5. ESD Ratings 1, 2
1 All ESD testing conforms to CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
2 Device failure is defined as: ‘If after exposure to ESD pulses, the device does not meet the device specification requirements,
which includes the complete DC parametric and functional testing at room temperature and hot temperature.
Characteristic
Symbol
Value
Unit
ESD for human body model (HBM)
2000
V
HBM circuit description
R1
1500
C100
pF
ESD for field induced charge model (FDCM)
500 (all pins)
V
750 (corner pins)
Number of pulses per pin:
Positive pulses (HBM)
Negative pulses (HBM)
1
Interval of pulses
1
second
Table 6. VRC and POR Electrical Specifications
Spec
Characteristic
Symbol
Min.
Max.
Units
11.5 V (VDD) POR
1
Negated (ramp up)
Asserted (ramp down)
VPOR15
1.1
1.35
V
23.3 V (VDDSYN) POR
Asserted (ramp up)
Negated (ramp up)
Asserted (ramp down)
Negated (ramp down)
VPOR33
0.0
2.0
0.0
0.30
2.85
0.30
V
3
RESET pin supply
(VDDEH6) POR
Negated (ramp up)
Asserted (ramp down)
VPOR5
2.0
2.85
V
4
VRC33 voltage
Before VRC allows the pass
transistor to start turning on
VTRANS_START
1.0
2.0
V
5
When VRC allows the pass
transistor to completely turn on 3, 4
VTRANS_ON
2.0
2.85
V
6
When the voltage is greater than
the voltage at which the VRC keeps
the 1.5 V supply in regulation 5, 6
VVRC33REG
3.0
V
– 55o C7
11.0
mA
Current can be sourced
–40o C11.0
mA
7
by VRCCTL at Tj:
25o CIVRCCTL
8
9.0
mA
150o C
7.5
mA
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