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参数资料
| 型号： | MPC5554MZP80 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/58页 |
| 文件大小： | 0K |
| 描述： | IC MCU 32BIT 2MB FLASH 416PBGA |
| 标准包装： | 40 |
| 系列： | MPC55xx Qorivva |
| 核心处理器： | e200z6 |
| 芯体尺寸： | 32-位 |
| 速度： | 82MHz |
| 连通性： | CAN，EBI/EMI，SCI，SPI |
| 外围设备： | DMA，POR，PWM，WDT |
| 输入/输出数： | 256 |
| 程序存储器容量： | 2MB（2M x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 64K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.35 V ~ 1.65 V |
| 数据转换器： | A/D 40x12b |
| 振荡器型： | 外部 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 416-BBGA |
| 包装： | 托盘 |
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Electrical Characteristics
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
17
2 | V
DDA0 – VDDA1 | must be < 0.1 V.
3 V
PP can drop to 3.0 V during read operations.
4 If standby operation is not required, connect V
STBY to ground.
5 Applies to CLKOUT, external bus pins, and Nexus pins.
6 Maximum average RMS DC current.
7 Average current measured on automotive benchmark.
8 Peak currents can be higher on specialized code.
9 High use current measured while running optimized SPE assembly code with all code and data 100% locked in cache
(0% miss rate) with all channels of the eMIOS and eTPU running autonomously, plus the eDMA transferring data continuously from
SRAM to SRAM. Higher currents are possible if an “idle” loop that crosses cache lines is run from cache. Write code that avoids this
condition.
10 The current specification relates to average standby operation after SRAM has been loaded with data. For power up current see
11 Power requirements for the V
DD33 supply depend on the frequency of operation, load of all I/O pins, and the voltages on the I/O
segments. Refer to Table 11 for values to calculate the power dissipation for a specific operation.
12 Power requirements for each I/O segment are dependent on the frequency of operation and load of the I/O pins on a particular I/O
segment, and the voltage of the I/O segment. Refer to Table 10 for values to calculate power dissipation for specific operation. The
total power consumption of an I/O segment is the sum of the individual power consumptions for each pin on the segment.
13 Absolute value of current, measured at V
IL and VIH.
14 Weak pullup/down inactive. Measured at V
DDE = 3.6 V and VDDEH = 5.25 V. Applies to pad types: pad_fc, pad_sh, and pad_mh.
15 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each 8 oC
to 12 oC, in the ambient temperature range of 50 oC to 125 oC. Applies to pad types: pad_a and pad_ae.
16 V
SSA refers to both VSSA0 and VSSA1. | VSSA0 – VSSA1 | must be < 0.1 V.
17 Up to 0.6 V during power up and power down.
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