参数资料
型号: MPC5566MZP132
厂商: Freescale Semiconductor
文件页数: 55/66页
文件大小: 0K
描述: MCU 3MB FLASH 132MHZ 416-PBGA
标准包装: 200
系列: MPC55xx Qorivva
核心处理器: e200z6
芯体尺寸: 32-位
速度: 132MHz
连通性: CAN,EBI/EMI,以太网,SCI,SPI
外围设备: DMA,POR,PWM,WDT
输入/输出数: 256
程序存储器容量: 3MB(3M x 8)
程序存储器类型: 闪存
RAM 容量: 128K x 8
电压 - 电源 (Vcc/Vdd): 1.35 V ~ 1.65 V
数据转换器: A/D 40x12b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 416-BBGA
包装: 托盘
Revision History for the MPC5566 Data Sheet
MPC5566 Microcontroller Data Sheet, Rev. 3
Freescale
59
Table 2, Absolute Maximum Ratings:
Deleted Spec 3, “Flash core voltage.”
Spec 12 “DC Input Voltage”: Deleted from second line‘. . .except for eTPUB15 and SINB (DSPI_B_SIN)’ leaving
VDDEH powered I/O pads. Deleted third line ‘VDDEH powered by I/O pads (eTPUB15 and SINB), including the
min. and max values of -0.3 and 6.5 respectively, and deleted old footnote 7.
Spec 12 “DC Input Voltage”: Added footnote 8 to second line “VDDE powered I/O pads” that reads: ‘Internal
structures hold the input voltage less than the maximum voltage on all pads powered by the VDDE supplies, if the
maximum injection current specification is met (s mA for all pins) and VDDE is within the operating voltage
specifications.
Spec 14, column 2, changed: ‘VSS differential voltage’ to ‘VSS to VSSA differential voltage.’
Spec 15, column 2, changed: ‘VDD differential voltage’ to ‘VDD to VDDA differential voltage.’
Spec 21, Added the name of the spec, ‘VRC33 to VDDSYN differential voltage,’ as well as the name and cross
reference to Table 9, DC Electrical Specifications, to which the Spec was moved.
Spec 28 “Maximum Solder Temperature”: Added two subordinate lines:
Lead free (PbFree) and Leaded (SnPb) with maximum values of 260 C and 245 C respectively.
Footnote 1, added: ‘any of’ between ‘beyond’ and ‘the listed maxima.’
Deleted footnote 2: ‘Absolute maximum voltages are currently maximum burn-in voltages. Absolute maximum
specifications for device stress have not yet been determined.’Spec 26 “Maximum Operating Temperature
Range”: replaced -40 C with TL.
Footnote 6 (now footnote 5): Changed to the following sentence to the end, “Internal structures hold the input
voltage greater than -1.0 V if the injection current limit of 2 mA is met. Keep the negative DC voltage greater than
-0.6 V on eTPU[15] and on SINB during the internal power-on reset (POR) state.”
Table 4, EMI Testing Specifications:
Changed the maximum operating frequency to from 132 to fMAX.
Footnote 2: Deleted ‘Refer to Table 1 for the maximum operating frequency.’
Table 35. Table and Figure Changes Between Rev. 0.0 and Rev. 1.0 (continued)
Location
Description of Changes
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