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| 型号： | MPC5566MZP132 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 57/66页 |
| 文件大小： | 0K |
| 描述： | MCU 3MB FLASH 132MHZ 416-PBGA |
| 标准包装： | 200 |
| 系列： | MPC55xx Qorivva |
| 核心处理器： | e200z6 |
| 芯体尺寸： | 32-位 |
| 速度： | 132MHz |
| 连通性： | CAN，EBI/EMI，以太网，SCI，SPI |
| 外围设备： | DMA，POR，PWM，WDT |
| 输入/输出数： | 256 |
| 程序存储器容量： | 3MB（3M x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 128K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.35 V ~ 1.65 V |
| 数据转换器： | A/D 40x12b |
| 振荡器型： | 外部 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 416-BBGA |
| 包装： | 托盘 |
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MPC5566 Microcontroller Data Sheet, Rev. 3
Revision History for the MPC5566 Data Sheet
Freescale Semiconductor
60
Table 5, ESD Characteristics: Added (Electromagnetic Static Discharge) in the table title.
Table 6, VCR/POR Electrical Specifications:
Added footnote 1 to specs 1, 2, and 3 that reads: On power up, assert RESET before VPOR15, VPOR33, and VPOR5
negate (internal POR). RESET must remain asserted until the power supplies are within the operating conditions
as specified in Table 9 DC Electrical Specifications. On power down, assert RESET before any power supplies
fall outside the operating conditions and until the internal POR asserts.
Subscript all symbol names that appear after the first underscore character.
Specs 7 and 10: added ‘at Tj ‘ at the end of the first line in the second column: Characteristic.
Removed ‘Tj ‘ after ‘150 C’ in the last line, second column: Characteristic.
Spec 10, second column, second line:
Added cross-reference to footnote 6: ‘IVRCCTL is measured at the following conditions: VDD = 1.35 V, VRC33 =3.1
V, VVRCCTL = 2.2 V.’ Changed ‘(@ VDD = 1.35 V, fsys = fMAX)‘ to ‘(@ fsys = fMAX).’
Footnote 10: Deleted ‘Preliminary value. Final specification pending characterization.”
Added to Spec 2:
3.3 V (VDDSYN) POR negated (ramp down)
Min 0.0
Max 0.30 V
3.3 V (VDDSYN) POR asserted (ramp up)
Min 0.0
Max 0.30 V
Added new footnote 1 to both lines in Spec 3: “ VIL_S (Table 9, Spec 15) is guaranteed to scale with VDDEH6 down
to VPOR5.
Spec 5: Changed old Footnote 1 (now footnote 2): ‘User must be able to supply full operating current for the 1.5V
supply when the 3.3V supply reaches this range.” to ‘Supply full operating current for the 1.5 V supply when the
3.3 V supply reaches this range.”
Spec 3: Added new footnote 3 for both lines: ‘It is possible to reach the current limit during ramp up--do not treat
this event as a short circuit current.’
Spec 10:
Changed the minimum values of: -40 C = 60; 25 C = 65.
Added old footnote 5 new footnote 6.
Added a new footnote 7, ‘Refer to Table 1 for the maximum operating frequency.’
Rewrote old footnote 7(new footnote 9) to: Represents the worst-case external transistor BETA. It is measured
on a per part basis and calculated as (IDD IVRCCTL).
Deleted old footnote 8: ‘Preliminary value. Final specification pending characterization.’
Table 7, Power Sequence Pin Status for Fast Pads:
Changed title to Pin Status for Fast Pads During the Power Sequence
Changed preceding paragraph
From: Although there are no power up/down sequencing requirements to prevent issues like latch-up, excessive
current spikes, etc., the state of the I/O pins during power up/down varies depending on power. Prior to exiting
POR, the pads are in a high impedance state (Hi-Z).
To: There are no power up/down sequencing requirements to prevent issues such as latch-up, excessive current
spikes, and so on. Therefore, the state of the I/O pins during power up/down varies depending on which supplies
are powered.
Deleted the ‘Comment’ column.
Added a POR column after the VDD column.
Added row 2:’ VDDE, Low, Low, Asserted, High’ and row 5: VDDE, VDD33, VDD, Asserted, Hi-Z.
Table 8, Power Sequence Pin Status for Medium/Slow Pads:
Changed title to Pin Status for Medium and Slow Pads During the Power Sequence
Updated preceding paragraph.
Deleted the ‘Comment’ column.
Added a POR column after the VDD column.
Added row 3:’ VDDEH, VDD, Asserted, Hi-Z.’
Table 35. Table and Figure Changes Between Rev. 0.0 and Rev. 1.0 (continued)
Location
Description of Changes
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