参数资料
型号: MPC8560VTAQFC
厂商: Freescale Semiconductor
文件页数: 14/108页
文件大小: 0K
描述: MPU POWERQUICC III 783FCPBGA
标准包装: 36
系列: MPC85xx
处理器类型: 32-位 MPC85xx PowerQUICC III
速度: 1.0GHz
电压: 1.3V
安装类型: 表面贴装
封装/外壳: 784-BBGA,FCBGA
供应商设备封装: 783-FCPBGA(29x29)
包装: 托盘
MPC8560 Integrated Processor Hardware Specifications, Rev. 4.2
Freescale Semiconductor
13
Power Characteristics
3 Power Characteristics
The estimated power dissipation on the VDD supply for the MPC8560 is shown in Table 4.
The estimated power dissipation on the AVDD supplies for the MPC8560 PLLs is shown in Table 5.
Table 4. MPC8560 VDD Power Dissipation
1,2
CCB Frequency (MHz) Core Frequency (MHz)
Typical Power3,4
Maximum Power5
Unit
200
400
5.1
7.7
W
500
5.4
8.0
600
5.8
8.4
267
533
6.0
8.7
W
667
6.4
9.2
800
6.9
10.7
333
667
6.8
9.8
W
833
7.4
11.4
1000 6
11.9
16.5
Notes:
1. The values do not include I/O supply power (OVDD, LVDD, GVDD) or AVDD.
2. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance,
mounting site (board) temperature, air flow, power dissipation of other components on the board, and
board thermal resistance. Any customer design must take these considerations into account to ensure
the maximum 105 °C junction temperature is not exceeded on this device.
3. Typical Power is based on a nominal voltage of VDD = 1.2 V, a nominal process, a junction temperature
of Tj = 105 °C, and a Dhrystone 2.1 benchmark application.
4. Thermal solutions will likely need to design to a number higher than Typical Power based on the end
application, TA target, and I/O power.
5. Maximum power is based on a nominal voltage of VDD = 1.2 V, worst case process, a junction
temperature of Tj = 105 °C, and an artificial smoke test.
6. The nominal recommended VDD is 1.3 V for this speed grade.
Table 5. MPC8560 AVDD Power Dissipation
AVDDnTypical
1
Unit
AVDD1
0.007
W
AVDD2
0.014
W
AVDD3
0.004
W
Notes:
1. VDD = 1.2 V(1.3 V for 1.0 GHz device), TJ = 105°C
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