参数资料
型号: MPQ2222A
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 0.5 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116
封装: PLASTIC, DIP-14
文件页数: 20/25页
文件大小: 373K
代理商: MPQ2222A
MPQ2222 MPQ2222A
2–463
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 8. Current–Gain — Bandwidth Product
Figure 9. Capacitances
Figure 10. Turn–On Time
Figure 11. Charge Data
Figure 12. Turn–Off Behavior
Figure 13. Turn–Off Behavior
1.0
IC, COLLECTOR CURRENT (mAdc)
500
100
20
50
10
VR, REVERSE VOLTAGE (VOLTS)
3.0
20
0.1
7.0
5.0
3.0
100
300
3.0
IC, COLLECTOR CURRENT (mA)
200
100
50
30
20
10
IC, COLLECTOR CURRENT (mA)
7.0
3.0
10 k
5 k
2 k
1 k
500
200
5.0
200
20
100
10
IC, COLLECTOR CURRENT (mA)
300
200
100
50
20
10
IC, COLLECTOR CURRENT (mA)
50
f T
,CURRENT–GAIN
BANDWIDTH
PRODUCT
(MHz)
C,
CAP
ACIT
ANCE
(pF)
t,TIME
(ns)
CHARGE
(pC)
10
2.0
5.0
20
30
5.0
10
0.2
0.5
1.0
2.0
10
20
30
5.0
10
20
50
10
20
100
200 300
,ST
ORAGE
AND
FALL
TIME
(ns)
t f
200
300
200
30
70
0.1
0.2
0.5
0.3
VCE = 20 V
TJ = 25°C
f = 100 MHz
0.3
Cib
Cob
100
50
20
30
50 70
VCC = 30 V
UNLESS NOTED
TJ = 25°C
IC/IB = 10
VCC = 5 V
UNLESS NOTED
TJ = 25°C
IC/IB = 10
td @ VEB(off) = 0
td @ VEB(off) = 2 V
tr @ 5 V
tr
QA, ACTIVE REGION
CHARGE
QT, TOTAL CONTROL
CHARGE
HIGH GAIN TYPES
LOW GAIN TYPES
ALL TYPES
VCC = 30 V
30
70
t s
,
20
100
10
300
200
100
50
20
10
50
,ST
ORAGE
AND
FALL
TIME
(ns)
t f
200
300
30
70
t s
,
30
70
30
70
HIGH GAIN TYPES
TJ = 25°C
IC/IB = 10
IC/IB = 20
ts
tf
LOW GAIN TYPES
TJ = 25°C
IC/IB = 10
IC/IB = 20
ts
tf
3.0
SWITCHING TIME CHARACTERISTICS
30
TJ = 25°C
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